Gallium Arsenide Wafer CAS #: 1303-00-0

Synonyms Gallium arsenide single crystal wafer, GaAs eipwafer, GaAs HEMT, pHEMT, mHEMT epi-wafer, N type or P type epitaxial wafer

Compound Formula: AsGa Molecular Weight: 144.64 Appearance: Gray crystalline solid Melting Point: 1400 °C (2550 °F) Boiling Point: N/A Density: 5.3 g/cm3 Solubility in H2O: N/A Exact Mass: 143.84717 Monoisotopic Mass: 143.84717 Poisson's Ratio: 0.31 Young's Modulus: 85 GPa Thermal Conductivity: 47 W/m-K Thermal Expansion: 5.6 µm/m-K Specific Heat: 360 J/kg-K Refractive Index: 3.4

Health & Safety Information Signal Word: Danger Hazard Statements: H301 + H331-H410 Hazard Codes: T,N Risk Codes: 23/25-50/53 Safety Statements: 20/21-28-45-60-61 RTECS Number: LW8800000 Transport Information: UN 1557 6.1/PG 2 WGK Germany: 3

Chemical Identifiers Linear Formula: GaAs Pubchem CID: 14770 MDL Number: MFCD00011017 EC No.: 215-114-8 IUPAC Name: gallanylidynearsane Beilstein/Reaxys No.: N/A SMILES: [As]#[Ga] InchI Identifier: InChI=1S/As.Ga InchI Key: JBRZTFJDHDCESZ-UHFFFAOYSA-N