Silicon Wafer, Boron-doped CAS #: 7440-21-3

Synonyms Silicon wafer 100>, P-type, doped with boron

Molecular Weight: 28.08 Appearance: Crystalline wafer Melting Point: 1410 °C Boiling Point: 2355 °C Density: 2.33 g/cm3(25 °C) Solubility in H2O: N/A Poisson's Ratio: 0.064 - 0.28 Young's Modulus: 51-80 GPa Vickers Hardness: N/A Tensile Strength: N/A Thermal Conductivity: 1.49 W/cm/K @ 298.2 K Thermal Expansion: (25 °C) 2.6 µm·m-1·K-1 Electrical Resistivity: 3-4 microhm-cm @ 0 °C Electronegativity: 1.8 Paulings Specific Heat: 0.168 Cal/g/K @ 25 °C Heat of Fusion: 9.47 Cal/gm mole Heat of Vaporization: 40.6 K-Cal/gm atom at 2355 °C

Health & Safety Information Signal Word: N/A Hazard Statements: N/A Hazard Codes: N/A Precautionary Statements: P312 Flash Point: Not applicable Risk Codes: N/A Safety Statements: N/A RTECS Number: VW0400000 Transport Information: NONH WGK Germany: 2

Chemical Identifiers Linear Formula: Si / B Pubchem CID: 5461123 MDL Number: MFCD00085311 EC No.: 231-130-8 Beilstein/Reaxys No.: N/A SMILES: [Si] InchI Identifier: InChI=1S/Si InchI Key: XUIMIQQOPSSXEZ-UHFFFAOYSA-N Packing of Standard Packing: Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 948 gallon liquid totes Special package is available on request.